MOSFET. MIS structures, two terminal structure: MOS capacitor, concept of accumulation, depletion and inversion; four terminal structure: MOSFET, its I-V characteristics, drain current equation in terms of W/L, second order effects, brief introduction to MOS scaling and scaling issues viz. short channel effects. Power MOSFET Construction, Comparison with power BJT
CoolMOS™C6 is Infineon's fifth generation of high voltage power MOSFETs designed according to the revolutionary superjunction (SJ) principle. The new CoolMOSC6 series combines our experience as the leading SJ MOSFET supplier with best-in-class innovation. The resulting C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. C6 to achieves extremely low conduction and switching losses and can make switching applications more efficient, more compact, lighter and cooler. Moreover, it has the best cost/performance ratio on the market today. Product Features:
Low area specific on-state resistance(Ron* A)
Low energy storage in output capacitance (Eoss)
High body diode ruggedness
Low reverse recovery charge (Qrr)
Benefits:
Easy control of switching behavior
Better light load efficiency compared to C3
Proven CoolMOSTM quality combined with high body diode ruggedness guarantee outstanding reliability
Lower price compared to previous CoolMOSTM generations
Applications:
PFC stages for server, PC silverbox, LCD & PDP TV, lighting, adapter
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