Power MOSFETs TrenchFET(R) Gen III

New Breakthrough Technology Lowers On-Resistance up to 40% While Improving Gate Charge

Key Features and Benefits:
Low conduction and switching losses enable increased efficiency and reduced power consumption

•Record-breaking maximum on-resistance at VGS = 4.5 V rating is up to 35% - Down to 0.0017 Ω
•Maximum on-resistance at VGS = 10 V is also up to 40% lower - Down to 0.0012 Ω
•Figure of Merit (FOM) of on-resistance times gate charge up to 42% lower - Down to 85 mΩ-nC
12-V to 40-V options, all with 20 V VGS

Package options in SO-8 footprint area include:

•Thermally advanced PowerPAK® SO-8
•Standard SO-8
•PolarPAK® with double-sided cooling
Also available in the thermally advanced PowerPAK 1212-8 and PowerPAK ChipFET®, about 1/3 and 1/5 respectively of the SO-8 footprint area

Circuit Applications

•Synchronous Rectification
•Synchronous Buck Converter
◦Low-Side MOSFET
•OR-ing
Product Applications
•VRM
•POL
•Servers
•Fixed Telecom
•Power Supplies
TrenchFET® Gen III

TrenchFET® Gen III power MOSFETs are ideal for low-side applications, where their low on-resistance minimizes conduction losses and improves efficiency compared to previous-generation MOSFETs. Also lower gate charge yields approximately 1/3 lower FOM in some devices, providing lower switching losses over the previous generation.

Asignatura: EES.
Alumno: Juan José Núñez Ceballos
Fuente: http://www.vishay.com/mosfets/pt0105-list/
Reflexión: No obstante aún cuando hemos ofendido a Dios con nuestros pecados, Él es misericordioso y no quiere que su ira[Ro1:18-19] venga sobre nosotros, el quiere salvarnos de esto[1Te5:9]